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FDI3632
FDI3632
MOSFETs FDI3632
onsemi
FDI3632
--
Diodes, Transistors and Thyristors
MOSFETs
FDI3632.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.5
Package Height9.2
Package Length9.9
Product CategoryPower MOSFET
Supplier PackageI2PAK
Standard Package NameTO-262
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)46
Typical Rise Time (ns)39
Number of Elements per Chip1
Maximum Power Dissipation (mW)310000
Typical Gate Charge @ 10V (nC)84
Typical Gate Charge @ Vgs (nC)84@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)30
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)96
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Typical Input Capacitance @ Vds (pF)6000@25V
Maximum Drain Source Resistance (mOhm)9@10V
Description
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) I2PAK Rail
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