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FDMA86108LZ
FDMA86108LZ
MOSFETs FDMA86108LZ
onsemi
FDMA86108LZ
--
Diodes, Transistors and Thyristors
MOSFETs
FDMA86108LZ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width2
Package Height0.75
Package Length2
Product CategoryPower MOSFET
Supplier PackageWDFN EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameDFN
Typical Fall Time (ns)1.7
Typical Rise Time (ns)1.7
Number of Elements per Chip1
Maximum Power Dissipation (mW)2400
Typical Gate Charge @ 10V (nC)2.1
Typical Gate Charge @ Vgs (nC)2.1@10V|1.1@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)4.2
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)7.6
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.2
Typical Input Capacitance @ Vds (pF)116@50V
Maximum Drain Source Resistance (mOhm)243@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 100V 2.2A 6-Pin WDFN EP T/R
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