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FDMB2307NZ
FDMB2307NZ
MOSFETs FDMB2307NZ
onsemi
FDMB2307NZ
--
Diodes, Transistors and Thyristors
MOSFETs
FDMB2307NZ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Common Drain
Package Width3
Package Height0.73
Package Length2
Product CategoryPower MOSFET
Supplier PackageWDFN EP
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameDFN
Typical Fall Time (ns)9.5
Typical Rise Time (ns)19
Supplier Temperature GradeCommercial
Number of Elements per Chip2
Maximum Gate Resistance (Ohm)8
Minimum Gate Resistance (Ohm)0.1
Maximum Power Dissipation (mW)2200
Typical Gate Charge @ Vgs (nC)20@5V|18@4.5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)229
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.5
Typical Turn-Off Delay Time (ns)32
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)5.3
Maximum Gate Threshold Voltage (V)1.5
Minimum Gate Threshold Voltage (V)0.6
Typical Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)2.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.7
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1760@10V
Maximum Drain Source Resistance (mOhm)16.5@4.5V
Maximum Gate Source Leakage Current (nA)10000
Maximum Positive Gate Source Voltage (V)12
Maximum Pulsed Drain Current @ TC=25°C (A)40
Maximum Power Dissipation on PCB @ TC=25°C (W)2.2
Typical Reverse Transfer Capacitance @ Vds (pF)211@10V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)9.7
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)161
Description
Trans MOSFET N-CH 20V 9.7A 6-Pin WDFN EP T/R
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