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FDMC610P
FDMC610P
MOSFETs FDMC610P
onsemi
FDMC610P
--
Diodes, Transistors and Thyristors
MOSFETs
FDMC610P.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3.4(Max)
Package Height1(Max)
Package Length3.4(Max)
Product CategoryPower MOSFET
Supplier PackagePower 33
Maximum IDSS (uA)1
Process TechnologyTrenchFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)87
Typical Rise Time (ns)37
Number of Elements per Chip1
Maximum Power Dissipation (mW)2400
Typical Gate Charge @ Vgs (nC)71@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)24
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)193
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)22
Typical Input Capacitance @ Vds (pF)890@6V
Maximum Drain Source Resistance (mOhm)3.9@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 12V 22A 8-Pin Power 33 T/R
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