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FDMC7208S
FDMC7208S
MOSFETs FDMC7208S
onsemi
FDMC7208S
--
Diodes, Transistors and Thyristors
MOSFETs
FDMC7208S.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Triple Source
Package Width3
Package Height0.75(Max)
Package Length3
Product CategoryPower MOSFET
Supplier PackagePower 33
Maximum IDSS (uA)500@Q 2|1@Q 1
Process TechnologyTMOS
Typical Fall Time (ns)2
Typical Rise Time (ns)3@Q 2|2@Q 1
Number of Elements per Chip2
Maximum Power Dissipation (mW)1900
Typical Gate Charge @ 10V (nC)26@Q 2|13@Q 1
Typical Gate Charge @ Vgs (nC)14@5V@Q 2|26@10V|6.7@5V@Q 1|13@10V
Maximum Gate Source Voltage (V)±12@Q 2|±20@Q 1
Typical Turn-On Delay Time (ns)7@Q 2|6@Q 1
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)23@Q 2|16@Q 1
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16@Q 2|12@Q 1
Typical Input Capacitance @ Vds (pF)1685@15V@Q 2|848@15V@Q 1
Maximum Drain Source Resistance (mOhm)6.4@10V@Q 2|9@10V@Q 1
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 12A/16A 8-Pin Power 33 T/R
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