Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual Triple Source |
Package Width | 3 |
Package Height | 0.75(Max) |
Package Length | 3 |
Product Category | Power MOSFET |
Supplier Package | Power 33 |
Maximum IDSS (uA) | 500@Q 2|1@Q 1 |
Process Technology | TMOS |
Typical Fall Time (ns) | 2 |
Typical Rise Time (ns) | 3@Q 2|2@Q 1 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 1900 |
Typical Gate Charge @ 10V (nC) | 26@Q 2|13@Q 1 |
Typical Gate Charge @ Vgs (nC) | 14@5V@Q 2|26@10V|6.7@5V@Q 1|13@10V |
Maximum Gate Source Voltage (V) | ±12@Q 2|±20@Q 1 |
Typical Turn-On Delay Time (ns) | 7@Q 2|6@Q 1 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 23@Q 2|16@Q 1 |
Maximum Gate Threshold Voltage (V) | 3 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 16@Q 2|12@Q 1 |
Typical Input Capacitance @ Vds (pF) | 1685@15V@Q 2|848@15V@Q 1 |
Maximum Drain Source Resistance (mOhm) | 6.4@10V@Q 2|9@10V@Q 1 |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |