PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | P|N |
Configuration | Dual Dual Source |
Package Width | 3 |
Package Height | 0.75(Max) |
Package Length | 3 |
Product Category | Power MOSFET |
Supplier Package | Power 33 EP |
Maximum IDSS (uA) | 1 |
Process Technology | TMOS |
Typical Fall Time (ns) | 2.2@N Channel|6.3@P Channel |
Typical Rise Time (ns) | 1.3@N Channel|1.6@P Channel |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 1900 |
Typical Gate Charge @ 10V (nC) | 4.4@N Channel|2.9@P Channel |
Typical Gate Charge @ Vgs (nC) | 4.4@10V@N Channel|2.9@10V@P Channel |
Maximum Gate Source Voltage (V) | ±20@N Channel|±25@P Channel |
Typical Turn-On Delay Time (ns) | 5.4@N Channel|5.2@P Channel |
Maximum Drain Source Voltage (V) | 150 |
Typical Turn-Off Delay Time (ns) | 9.1@N Channel|7.4@P Channel |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 2.4@N Channel|0.9@P Channel |
Typical Input Capacitance @ Vds (pF) | 279@75V@N Channel|162@75V@P Channel |
Maximum Drain Source Resistance (mOhm) | 1200@10V@P Channel|155@10V@N Channel |
Maximum Gate Source Leakage Current (nA) | 100 |
Description | |