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FDMC8097AC
FDMC8097AC
MOSFETs FDMC8097AC
onsemi
FDMC8097AC
--
Diodes, Transistors and Thyristors
MOSFETs
FDMC8097AC.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeP|N
ConfigurationDual Dual Source
Package Width3
Package Height0.75(Max)
Package Length3
Product CategoryPower MOSFET
Supplier PackagePower 33 EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Typical Fall Time (ns)2.2@N Channel|6.3@P Channel
Typical Rise Time (ns)1.3@N Channel|1.6@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)1900
Typical Gate Charge @ 10V (nC)4.4@N Channel|2.9@P Channel
Typical Gate Charge @ Vgs (nC)4.4@10V@N Channel|2.9@10V@P Channel
Maximum Gate Source Voltage (V)±20@N Channel|±25@P Channel
Typical Turn-On Delay Time (ns)5.4@N Channel|5.2@P Channel
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)9.1@N Channel|7.4@P Channel
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.4@N Channel|0.9@P Channel
Typical Input Capacitance @ Vds (pF)279@75V@N Channel|162@75V@P Channel
Maximum Drain Source Resistance (mOhm)1200@10V@P Channel|155@10V@N Channel
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N/P-CH 150V 2.4A/0.9A 8-Pin Power 33 EP T/R
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