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MOSFETs FDMS1D2N03DSD
onsemi
FDMS1D2N03DSD
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 6.1(Max) |
| Package Height | 0.75(Max) |
| Package Length | 5.1(Max) |
| Product Category | Power MOSFET |
| Supplier Package | PQFN EP |
| Maximum IDSS (uA) | 1@Q 1|500@Q 2 |
| Process Technology | PowerTrench |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 2@Q 1|4@Q 2 |
| Typical Rise Time (ns) | 2@Q 1|5@Q 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2100@Q 1|2300@Q 2 |
| Typical Gate Charge @ 10V (nC) | 23@Q 1|84@Q 2 |
| Typical Gate Charge @ Vgs (nC) | 23@10V|11@4.5V@Q 1|84@10V|39@4.5V@Q 2 |
| Maximum Gate Source Voltage (V) | 16|-12 |
| Typical Turn-On Delay Time (ns) | 8@Q 1|13@Q 2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 22@Q 1|37@Q 2 |
| Maximum Gate Threshold Voltage (V) | 2.5@Q 1|3@Q 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 19@Q 1|37@Q 2 |
| Typical Input Capacitance @ Vds (pF) | 1410@15V@Q 1|4860@15V@Q 2 |
| Maximum Drain Source Resistance (mOhm) | 3.25@10V@Q 1|0.97@10V@Q 2 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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