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FDMS3615S
FDMS3615S
MOSFETs FDMS3615S
onsemi
FDMS3615S
--
Diodes, Transistors and Thyristors
MOSFETs
FDMS3615S.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width6
Package Height1.05(Max)
Package Length5
Product CategoryPower MOSFET
Supplier PackagePower 56
Process TechnologyPowerTrench
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)2.2@Q 2|1.4@Q 1
Typical Rise Time (ns)1.7@Q 1|3@Q 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)2300
Typical Gate Charge @ 10V (nC)19@Q 1|31@Q 2
Typical Gate Charge @ Vgs (nC)14@4.5V@Q 2|31@10V|9@4.5V@Q 1|19@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.7@Q 1|9.5@Q 2
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)19@Q 1|24@Q 2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18@Q 2|16@Q 1
Typical Input Capacitance @ Vds (pF)2175@13V@Q 2|1326@13V@Q 1
Maximum Drain Source Resistance (mOhm)5.8@10V@Q 1|3.4@10V@Q 2
Description
Trans MOSFET N-CH Si 25V 16A/18A 8-Pin Power 56 T/R
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