Product Attribute | Attribute Value |
PPAP | No |
Material | Si |
Packaging | Tube |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Process Technology | HEXFET |
Typical Fall Time (ns) | 66 |
Typical Rise Time (ns) | 160 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 180000 |
Typical Gate Charge @ Vgs (nC) | 60(Max)@4.5V |
Maximum Gate Source Voltage (V) | ±16 |
Typical Turn-On Delay Time (ns) | 11 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 23 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 116 |
Typical Input Capacitance @ Vds (pF) | 3290@25V |
Maximum Drain Source Resistance (MOhm) | 7@10V |
Description |