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FDMS7620S
FDMS7620S
MOSFETs FDMS7620S
onsemi
FDMS7620S
--
Diodes, Transistors and Thyristors
MOSFETs
FDMS7620S.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width6
Package Height0.5
Package Length5
Product CategoryPower MOSFET
Supplier PackageDFN EP
Process TechnologyTMOS
Standard Package NameDFN
Typical Fall Time (ns)1.4@Q 1|1.5@Q 2
Typical Rise Time (ns)1.2@Q 1|1.8@Q 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)2200@Q 1|2500@Q 2
Typical Gate Charge @ 10V (nC)7.2@Q 1|15.6@Q 2
Typical Gate Charge @ Vgs (nC)7.2@10V|3.8@5V@Q 1|15.6@10V|7.9@5V@Q 2
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)5.2@Q 1|6.6@Q 2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)11.9@Q 1|17.4@Q 2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10.1@Q 1|12.4@Q 2
Typical Input Capacitance @ Vds (pF)457@15V@Q 1|1050@15V@Q 2
Maximum Drain Source Resistance (mOhm)20@10V@Q 1|11.2@10V@Q 2
Description
Trans MOSFET N-CH Si 30V 10.1A/12.4A 8-Pin DFN EP T/R
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