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FDMS8460
FDMS8460
MOSFETs FDMS8460
onsemi
FDMS8460
--
Diodes, Transistors and Thyristors
MOSFETs
FDMS8460.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.85(Max)
Package Height1.05(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameQFN
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)7
Typical Rise Time (ns)9
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)3.1
Minimum Gate Resistance (Ohm)0.1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)78
Typical Gate Charge @ Vgs (nC)36@4.5V|78@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)1470
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)40
Typical Gate Plateau Voltage (V)3.1
Typical Turn-Off Delay Time (ns)48
Maximum Diode Forward Voltage (V)1.3
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)10
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.9
Typical Gate to Source Charge (nC)15
Typical Reverse Recovery Time (ns)53
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)25
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)5415@20V
Typical Reverse Recovery Charge (nC)40
Maximum Drain Source Resistance (mOhm)2.2@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)160
Maximum Power Dissipation on PCB @ TC=25°C (W)2.5
Typical Reverse Transfer Capacitance @ Vds (pF)170@20V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)25
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)125
Description
Trans MOSFET N-CH Si 40V 25A 8-Pin PQFN EP T/R
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