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FDMT80060DC
FDMT80060DC
MOSFETs FDMT80060DC
onsemi
FDMT80060DC
--
Diodes, Transistors and Thyristors
MOSFETs
FDMT80060DC.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width8
Package Height0.9(Max)
Package Length8
Product CategoryPower MOSFET
Supplier PackageQFN EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameQFN
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)19
Typical Rise Time (ns)47
Number of Elements per Chip1
Maximum Power Dissipation (mW)3200
Typical Gate Charge @ 10V (nC)170
Typical Gate Charge @ Vgs (nC)170@10V|137@8V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)75
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)66
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)43
Typical Input Capacitance @ Vds (pF)14406@30V
Maximum Drain Source Resistance (mOhm)1.1@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 60V 43A 8-Pin QFN EP T/R
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