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FDN302P
FDN302P
MOSFETs FDN302P
onsemi
FDN302P
--
Diodes, Transistors and Thyristors
MOSFETs
FDN302P.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4
Package Height0.94
Package Length2.92
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)15
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Typical Gate Charge @ Vgs (nC)9@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.4
Typical Input Capacitance @ Vds (pF)882@10V
Maximum Drain Source Resistance (mOhm)55@4.5V
Description
Trans MOSFET P-CH 20V 2.4A 3-Pin SOT-23 T/R
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