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FDN327N
FDN327N
MOSFETs FDN327N
onsemi
FDN327N
--
Diodes, Transistors and Thyristors
MOSFETs
FDN327N.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4
Package Height0.94
Package Length2.92
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)2
Typical Rise Time (ns)6.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Typical Gate Charge @ Vgs (nC)4.5@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)14
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2
Typical Input Capacitance @ Vds (pF)423@10V
Maximum Drain Source Resistance (MOhm)70@4.5V
Description
Trans MOSFET N-CH 20V 2A 3-Pin SOT-23 T/R
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