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FDP090N10
FDP090N10
MOSFETs FDP090N10
onsemi
FDP090N10
--
Diodes, Transistors and Thyristors
MOSFETs
FDP090N10.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameTO-220
Typical Fall Time (ns)149
Typical Rise Time (ns)322
Number of Elements per Chip1
Maximum Power Dissipation (mW)208000
Typical Gate Charge @ 10V (nC)89
Typical Gate Charge @ Vgs (nC)89@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)107
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)166
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)75
Typical Input Capacitance @ Vds (pF)6185@25V
Maximum Drain Source Resistance (mOhm)9@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220 Tube
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