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FDPC5018SG
FDPC5018SG
MOSFETs FDPC5018SG
onsemi
FDPC5018SG
--
Diodes, Transistors and Thyristors
MOSFETs
FDPC5018SG.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Common Source
Package Width6.1(Max)
Package Height0.75(Max)
Package Length5.1(Max)
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Maximum IDSS (uA)1@Q 1|500@Q 2
Process TechnologyTMOS
Standard Package NameQFN
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)2@Q 1|4@Q 2
Typical Rise Time (ns)2@Q 1|5@Q 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)2100@Q 1|2300@Q 2
Typical Gate Charge @ 10V (nC)17@Q 1|62@Q 2
Typical Gate Charge @ Vgs (nC)17@10V|8@4.5V@Q 1|62@10V|28@4.5V@Q 2
Maximum Gate Source Voltage (V)±20@Q 1|±12@Q 2
Typical Turn-On Delay Time (ns)8@Q 1|4@Q 2
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)18@Q 1|38@Q 2
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)17@Q 1|32@Q 2
Typical Input Capacitance @ Vds (pF)1224@15V@Q 1|4593@15V@Q 2
Maximum Drain Source Resistance (MOhm)5@10V@Q 1|1.6@10V@Q 2
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 17A/32A 8-Pin PQFN EP T/R
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