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FQA140N10
FQA140N10
MOSFETs FQA140N10
onsemi
FQA140N10
--
Diodes, Transistors and Thyristors
MOSFETs
FQA140N10.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3P
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-3P
Typical Fall Time (ns)360
Typical Rise Time (ns)940
Number of Elements per Chip1
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ 10V (nC)220
Typical Gate Charge @ Vgs (nC)220@10V
Maximum Gate Source Voltage (V)±25
Typical Output Capacitance (pF)2000
Typical Turn-On Delay Time (ns)75
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)5.9
Typical Turn-Off Delay Time (ns)350
Maximum Diode Forward Voltage (V)1.5
Typical Gate to Drain Charge (nC)114
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)39
Typical Reverse Recovery Time (ns)140
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)140
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)6100@25V
Typical Reverse Recovery Charge (nC)730
Maximum Drain Source Resistance (mOhm)10@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)25
Maximum Pulsed Drain Current @ TC=25°C (A)560
Typical Reverse Transfer Capacitance @ Vds (pF)420@25V
Description
Trans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-3P Tube
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