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FDPC8014S
FDPC8014S
MOSFETs FDPC8014S
onsemi
FDPC8014S
--
Diodes, Transistors and Thyristors
MOSFETs
FDPC8014S.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width6.25(Max)
Package Height0.75(Max)
Package Length5.1(Max)
Product CategoryPower MOSFET
Supplier PackagePower 56 EP
Maximum IDSS (uA)1@Q 1|500@Q 2
Process TechnologyTrenchFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)2@Q 1|4@Q 2
Typical Rise Time (ns)2@Q 1|6@Q 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)2100@Q 1|2300@Q 2
Typical Gate Charge @ 10V (nC)25@Q 1|93@Q 2
Typical Gate Charge @ Vgs (nC)25@10V|11@4.5V@Q 1|93@10V|43@4.5V@Q 2
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)8@Q 1|16@Q 2
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)24@Q 1|47@Q 2
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20@Q 1|41@Q 2
Typical Input Capacitance @ Vds (pF)1695@13V@Q 1|6580@13V@Q 2
Maximum Drain Source Resistance (MOhm)3.8@10V@Q 1|1.2@10V@Q 2
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 25V 20A/41A 8-Pin Power 56 EP T/R
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