Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
PCB changed | 8 |
Part Status | LTB |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Package Width | 6.25(Max) |
Package Height | 0.75(Max) |
Package Length | 5.1(Max) |
Product Category | Power MOSFET |
Supplier Package | Power 56 EP |
Maximum IDSS (uA) | 1@Q 1|500@Q 2 |
Process Technology | TrenchFET |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 2@Q 1|4@Q 2 |
Typical Rise Time (ns) | 2@Q 1|6@Q 2 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2100@Q 1|2300@Q 2 |
Typical Gate Charge @ 10V (nC) | 25@Q 1|93@Q 2 |
Typical Gate Charge @ Vgs (nC) | 25@10V|11@4.5V@Q 1|93@10V|43@4.5V@Q 2 |
Maximum Gate Source Voltage (V) | ±12 |
Typical Turn-On Delay Time (ns) | 8@Q 1|16@Q 2 |
Maximum Drain Source Voltage (V) | 25 |
Typical Turn-Off Delay Time (ns) | 24@Q 1|47@Q 2 |
Maximum Gate Threshold Voltage (V) | 2.5 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 20@Q 1|41@Q 2 |
Typical Input Capacitance @ Vds (pF) | 1695@13V@Q 1|6580@13V@Q 2 |
Maximum Drain Source Resistance (MOhm) | 3.8@10V@Q 1|1.2@10V@Q 2 |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |