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PSMN4R6-100XS,127
PSMN4R6-100XS,127
MOSFETs PSMN4R6-100XS,127
NXP
PSMN4R6-100XS,127
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.6(Max)
Package Height15.8(Max)
Package Length10.3(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220F
Maximum IDSS (uA)10
Typical Fall Time (ns)71
Typical Rise Time (ns)40
Number of Elements per Chip1
Maximum Power Dissipation (mW)63800
Typical Gate Charge @ 10V (nC)153
Typical Gate Charge @ Vgs (nC)153@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)35
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)170
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)70.4
Typical Input Capacitance @ Vds (pF)9900@50V
Maximum Drain Source Resistance (mOhm)4.6@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 70.4A 3-Pin(3+Tab) TO-220F Rail
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