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FDS6572A
FDS6572A
MOSFETs FDS6572A
onsemi
FDS6572A
--
Diodes, Transistors and Thyristors
MOSFETs
FDS6572A.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.9
Package Height1.65(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSOIC N
Process TechnologyPowerTrench
Standard Package NameSOP
Typical Fall Time (ns)66
Typical Rise Time (ns)25
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)57@4.5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)1433
Typical Turn-On Delay Time (ns)21
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)102
Typical Gate to Drain Charge (nC)16
Maximum Gate Threshold Voltage (V)1.5
Typical Gate to Source Charge (nC)10
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16
Typical Input Capacitance @ Vds (pF)5914@10V
Maximum Drain Source Resistance (MOhm)6@4.5V
Description
Trans MOSFET N-CH 20V 16A 8-Pin SOIC N T/R
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