HTS | 8541.29.00.95 |
Tab | Tab |
PPAP | No |
EU RoHS | Not Compliant |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.7(Max) |
Package Height | 9.01(Max) |
Package Length | 10.41(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-220AB |
Maximum IDSS (uA) | 25 |
Standard Package Name | TO-220 |
Typical Fall Time (ns) | 13 |
Typical Rise Time (ns) | 14 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 50000 |
Typical Gate Charge @ 10V (nC) | 20(Max) |
Typical Gate Charge @ Vgs (nC) | 20(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 120 |
Typical Turn-On Delay Time (ns) | 10 |
Maximum Drain Source Voltage (V) | 400 |
Typical Gate Plateau Voltage (V) | 5 |
Typical Turn-Off Delay Time (ns) | 30 |
Maximum Diode Forward Voltage (V) | 1.6 |
Typical Gate to Drain Charge (nC) | 11(Max) |
Maximum Gate Threshold Voltage (V) | 4 |
Minimum Gate Threshold Voltage (V) | 2 |
Typical Gate to Source Charge (nC) | 3.3(Max) |
Typical Reverse Recovery Time (ns) | 270 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 3.3 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 410@25V |
Typical Reverse Recovery Charge (nC) | 1400 |
Maximum Drain Source Resistance (MOhm) | 1800@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 13 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 47@25V |
Description | |