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MOSFETs FDS8958A-F085
onsemi
FDS8958A-F085
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Yes |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Dual Dual Drain |
| Package Width | 3.9 |
| Package Height | 1.5(Max) |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | SOIC |
| Maximum IDSS (uA) | 1 |
| Process Technology | PowerTrench |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 9@P Channel|3@N Channel |
| Typical Rise Time (ns) | 13@P Channel|5@N Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ 10V (nC) | 9.6@P Channel|11.4@N Channel |
| Typical Gate Charge @ Vgs (nC) | 9.6@10V@P Channel|11.4@10V@N Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 132@P Channel|145@N Channel |
| Typical Turn-On Delay Time (ns) | 7@P Channel|8@N Channel |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 3@N Channel |
| Typical Turn-Off Delay Time (ns) | 14@P Channel|23@N Channel |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.88@P Channel|0.75@N Channel |
| Typical Gate to Drain Charge (nC) | 1.7@P Channel|2.1@N Channel |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate Threshold Voltage (V) | 1.7@P Channel|1.9@N Channel |
| Typical Gate to Source Charge (nC) | 1.7@N Channel|2.2@P Channel |
| Typical Reverse Recovery Time (ns) | 19 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5@P Channel|7@N Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 528@15V@P Channel|575@15V@N Channel |
| Typical Reverse Recovery Charge (nC) | 6@P Channel|9@N Channel |
| Maximum Drain Source Resistance (MOhm) | 52@10V@P Channel|28@10V@N Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.6 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 6@15V@P Channel|2.1@15V@N Channel |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 5@P Channel|7@N Channel |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 135 |
| Description |
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