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FDU8778
FDU8778
MOSFETs FDU8778
onsemi
FDU8778
--
Diodes, Transistors and Thyristors
MOSFETs
FDU8778.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.5(Max)
Package Height6.3(Max)
Package Length6.8(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Process TechnologyTMOS
Standard Package NameTO-251
Typical Fall Time (ns)32
Typical Rise Time (ns)22
Number of Elements per Chip1
Maximum Power Dissipation (mW)39000
Typical Gate Charge @ 10V (nC)12.6
Typical Gate Charge @ Vgs (nC)12.6@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)43
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)35
Typical Input Capacitance @ Vds (pF)635@13V
Maximum Drain Source Resistance (MOhm)14@10V
Description
Trans MOSFET N-CH 25V 35A 3-Pin(3+Tab) IPAK Tube
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