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FQA65N20
FQA65N20
MOSFETs FQA65N20
onsemi
FQA65N20
--
Diodes, Transistors and Thyristors
MOSFETs
FQA65N20.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3P
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-3P
Typical Fall Time (ns)275
Typical Rise Time (ns)640
Number of Elements per Chip1
Maximum Power Dissipation (mW)310000
Typical Gate Charge @ 10V (nC)170
Typical Gate Charge @ Vgs (nC)170@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)120
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)340
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)65
Typical Input Capacitance @ Vds (pF)6600@25V
Maximum Drain Source Resistance (mOhm)32@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-3P Tube
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