Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
Tab | Tab |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | LTB |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 5(Max) |
Package Height | 18.9(Max) |
Package Length | 16.2(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-3P |
Maximum IDSS (uA) | 1 |
Process Technology | DMOS |
Standard Package Name | TO-3P |
Typical Fall Time (ns) | 275 |
Typical Rise Time (ns) | 640 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 310000 |
Typical Gate Charge @ 10V (nC) | 170 |
Typical Gate Charge @ Vgs (nC) | 170@10V |
Maximum Gate Source Voltage (V) | ±30 |
Typical Turn-On Delay Time (ns) | 120 |
Maximum Drain Source Voltage (V) | 200 |
Typical Turn-Off Delay Time (ns) | 340 |
Maximum Gate Threshold Voltage (V) | 5 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 65 |
Typical Input Capacitance @ Vds (pF) | 6600@25V |
Maximum Drain Source Resistance (mOhm) | 32@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |