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FQB19N20CTM
FQB19N20CTM
MOSFETs FQB19N20CTM
onsemi
FQB19N20CTM
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Diodes, Transistors and Thyristors
MOSFETs
FQB19N20CTM.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)10
Process TechnologyDMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)115
Typical Rise Time (ns)150
Number of Elements per Chip1
Maximum Power Dissipation (mW)3130
Typical Gate Charge @ 10V (nC)40.5
Typical Gate Charge @ Vgs (nC)40.5@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)135
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)19
Typical Input Capacitance @ Vds (pF)830@25V
Maximum Drain Source Resistance (mOhm)170@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) D2PAK T/R
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