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FQB2NA90TM
FQB2NA90TM
MOSFETs FQB2NA90TM
onsemi
FQB2NA90TM
--
Diodes, Transistors and Thyristors
MOSFETs
FQB2NA90TM.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyDMOS
Standard Package NameTO-263
Typical Fall Time (ns)30
Typical Rise Time (ns)40
Number of Elements per Chip1
Maximum Power Dissipation (mW)3130
Typical Gate Charge @ 10V (nC)15
Typical Gate Charge @ Vgs (nC)15@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)900
Typical Turn-Off Delay Time (ns)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.8
Typical Input Capacitance @ Vds (pF)525@25V
Maximum Drain Source Resistance (mOhm)5800@10V
Description
Trans MOSFET N-CH 900V 2.8A 3-Pin(2+Tab) D2PAK T/R
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