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FQD2N60CTM
FQD2N60CTM
MOSFETs FQD2N60CTM
onsemi
FQD2N60CTM
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Diodes, Transistors and Thyristors
MOSFETs
FQD2N60CTM.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)28
Typical Rise Time (ns)25
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)8.5
Typical Gate Charge @ Vgs (nC)8.5@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)20
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)600
Typical Gate Plateau Voltage (V)4.9
Typical Turn-Off Delay Time (ns)24
Maximum Diode Forward Voltage (V)1.4
Typical Gate to Drain Charge (nC)4.1
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)1.3
Typical Reverse Recovery Time (ns)230
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.9
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)180@25V
Typical Reverse Recovery Charge (nC)1000
Maximum Drain Source Resistance (MOhm)4700@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)7.6
Typical Reverse Transfer Capacitance @ Vds (pF)4.3@25V
Description
Trans MOSFET N-CH 600V 1.9A 3-Pin(2+Tab) DPAK T/R
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