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SI3417DV-T1-GE3
SI3417DV-T1-GE3
MOSFETs SI3417DV-T1-GE3
Vishay
SI3417DV-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.65
Package Height1(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackageTSOP
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameSOP
Typical Fall Time (ns)12|16
Typical Rise Time (ns)8|35
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)32
Typical Gate Charge @ Vgs (nC)32@10V|15@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10|42
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)45|40
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)1350@15V
Maximum Drain Source Resistance (mOhm)25.2@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 30V 8A 6-Pin TSOP T/R
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