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FQD5N60CTM
FQD5N60CTM
MOSFETs FQD5N60CTM
onsemi
FQD5N60CTM
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Diodes, Transistors and Thyristors
MOSFETs
FQD5N60CTM.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)46
Typical Rise Time (ns)42
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)15
Typical Gate Charge @ Vgs (nC)15@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)38
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.8
Typical Input Capacitance @ Vds (pF)515@25V
Maximum Drain Source Resistance (mOhm)2500@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 2.8A 3-Pin(2+Tab) DPAK T/R
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