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FQD9N25TF
FQD9N25TF
MOSFETs FQD9N25TF
onsemi
FQD9N25TF
--
Diodes, Transistors and Thyristors
MOSFETs
FQD9N25TF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSSupplier Unconfirmed
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.1
Package Height2.3
Package Length6.6
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-252
Typical Fall Time (ns)45
Typical Rise Time (ns)105
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)15.5
Typical Gate Charge @ Vgs (nC)15.5@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)250
Typical Turn-Off Delay Time (ns)25
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.4
Typical Input Capacitance @ Vds (pF)540@25V
Maximum Drain Source Resistance (mOhm)420@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 250V 7.4A 3-Pin(2+Tab) DPAK T/R
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