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PHK12NQ10T
PHK12NQ10T
MOSFETs PHK12NQ10T
NXP
PHK12NQ10T
--
Diodes, Transistors and Thyristors
MOSFETs
PHK12NQ10T.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.45(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSO
Process TechnologyTMOS
Typical Fall Time (ns)11
Typical Rise Time (ns)21
Number of Elements per Chip1
Maximum Power Dissipation (mW)8900
Typical Gate Charge @ 10V (nC)35
Typical Gate Charge @ Vgs (nC)35@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)23
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)52
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11.6
Typical Input Capacitance @ Vds (pF)1965@25V
Maximum Drain Source Resistance (mOhm)28@10V
Description
Trans MOSFET N-CH 100V 11.6A 8-Pin SO
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