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FQP12P10
FQP12P10
MOSFETs FQP12P10
onsemi
FQP12P10
--
Diodes, Transistors and Thyristors
MOSFETs
FQP12P10.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-220
Typical Fall Time (ns)60
Typical Rise Time (ns)160
Number of Elements per Chip1
Maximum Power Dissipation (mW)75000
Typical Gate Charge @ 10V (nC)21
Typical Gate Charge @ Vgs (nC)21@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)35
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11.5
Typical Input Capacitance @ Vds (pF)620@25V
Maximum Drain Source Resistance (mOhm)290@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 100V 11.5A 3-Pin(3+Tab) TO-220 Tube
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