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IRFP064PBF
IRFP064PBF
MOSFETs IRFP064PBF
Vishay
IRFP064PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFP064PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.21(Max)
Package Height20.7(Max)
Package Length15.87(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247AC
Maximum IDSS (uA)25
Standard Package NameTO-247
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)190
Typical Rise Time (ns)190
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)190(Max)
Typical Gate Charge @ Vgs (nC)190(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)3200
Typical Turn-On Delay Time (ns)21
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)5.9
Typical Turn-Off Delay Time (ns)110
Maximum Diode Forward Voltage (V)3
Typical Gate to Drain Charge (nC)90(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)55(Max)
Typical Reverse Recovery Time (ns)160
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)70
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)7400@25V
Typical Reverse Recovery Charge (nC)900
Maximum Drain Source Resistance (mOhm)9@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)520
Typical Reverse Transfer Capacitance @ Vds (pF)540@25V
Description
Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-247AC
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