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FQP19N20
FQP19N20
MOSFETs FQP19N20
onsemi
FQP19N20
--
Diodes, Transistors and Thyristors
MOSFETs
FQP19N20.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Process TechnologyDMOS
Standard Package NameTO-220
Typical Fall Time (ns)80
Typical Rise Time (ns)190
Number of Elements per Chip1
Maximum Power Dissipation (mW)140000
Typical Gate Charge @ 10V (nC)31
Typical Gate Charge @ Vgs (nC)31@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)55
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)19.4
Typical Input Capacitance @ Vds (pF)1220@25V
Maximum Drain Source Resistance (mOhm)150@10V
Description
Trans MOSFET N-CH 200V 19.4A 3-Pin(3+Tab) TO-220 Tube
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