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FQPF19N20C
FQPF19N20C
MOSFETs FQPF19N20C
onsemi
FQPF19N20C
--
Diodes, Transistors and Thyristors
MOSFETs
FQPF19N20C.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7
Package Height15.87
Package Length10.16
Product CategoryPower MOSFET
Supplier PackageTO-220FP
Maximum IDSS (uA)10
Process TechnologyDMOS
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)115
Typical Rise Time (ns)150
Number of Elements per Chip1
Maximum Power Dissipation (mW)43000
Typical Gate Charge @ 10V (nC)40.5
Typical Gate Charge @ Vgs (nC)40.5@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)195
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)200
Typical Gate Plateau Voltage (V)6.4
Typical Turn-Off Delay Time (ns)135
Maximum Diode Forward Voltage (V)1.5
Typical Gate to Drain Charge (nC)22.5
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)6
Typical Reverse Recovery Time (ns)208
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)19
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)830@25V
Typical Reverse Recovery Charge (nC)1630
Maximum Drain Source Resistance (mOhm)170@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)76
Typical Reverse Transfer Capacitance @ Vds (pF)85@25V
Description
Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube
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