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FQPF22P10
FQPF22P10
MOSFETs FQPF22P10
onsemi
FQPF22P10
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Diodes, Transistors and Thyristors
MOSFETs
FQPF22P10.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width4.7
Package Height15.87
Package Length10.16
Product CategoryPower MOSFET
Supplier PackageTO-220FP
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)110
Typical Rise Time (ns)170
Number of Elements per Chip1
Maximum Power Dissipation (mW)45000
Typical Gate Charge @ 10V (nC)40
Typical Gate Charge @ Vgs (nC)40@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)460
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)6.3
Typical Turn-Off Delay Time (ns)60
Maximum Diode Forward Voltage (V)4
Typical Gate to Drain Charge (nC)21
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)7
Typical Reverse Recovery Time (ns)110
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)13.2
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1170@25V
Typical Reverse Recovery Charge (nC)600
Maximum Drain Source Resistance (MOhm)125@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)52.8
Typical Reverse Transfer Capacitance @ Vds (pF)160@25V
Description
Trans MOSFET P-CH 100V 13.2A 3-Pin(3+Tab) TO-220FP Tube
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