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FQT4N25TF
FQT4N25TF
MOSFETs FQT4N25TF
onsemi
FQT4N25TF
--
Diodes, Transistors and Thyristors
MOSFETs
FQT4N25TF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.69(Max)
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Process TechnologyDMOS
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)22
Typical Rise Time (ns)45
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)4.3
Typical Gate Charge @ Vgs (nC)4.3@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)6.8
Maximum Drain Source Voltage (V)250
Typical Turn-Off Delay Time (ns)6.4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.83
Typical Input Capacitance @ Vds (pF)155@25V
Maximum Drain Source Resistance (MOhm)1750@10V
Description
Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R
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