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FS55MR12W1M1HB11NPSA1
FS55MR12W1M1HB11NPSA1
MOSFETs FS55MR12W1M1HB11NPSA1
Infineon
FS55MR12W1M1HB11NPSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
EU RoHSNot Compliant
MaterialSiC
ECCN (US)EAR99
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationHex
Product CategoryPower MOSFET
Typical Fall Time (ns)17.3
Typical Rise Time (ns)19.7
Number of Elements per Chip6
Typical Gate Charge @ Vgs (nC)45@18
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)23.1
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)43.7
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)15
Typical Input Capacitance @ Vds (pF)1350@800V
Maximum Drain Source Resistance (MOhm)79@18V
Description
Trans MOSFET N-CH SiC 1.2KV 15A
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