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FW359-TL-E
FW359-TL-E
MOSFETs FW359-TL-E
onsemi
FW359-TL-E
--
Diodes, Transistors and Thyristors
MOSFETs
FW359-TL-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width4.4
Package Height1.5
Package Length5
Product CategoryPower MOSFET
Supplier PackageSOP
Maximum IDSS (uA)1
Standard Package NameSOP
Typical Fall Time (ns)40@N Channel|70@P Channel
Typical Rise Time (ns)23@N Channel|70@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2200
Typical Gate Charge @ 10V (nC)7.8@N Channel|22@P Channel
Typical Gate Charge @ Vgs (nC)7.8@10V@N Channel|22@10V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8@N Channel|12@P Channel
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)30@N Channel|100@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3
Typical Input Capacitance @ Vds (pF)300@20V@N Channel|990@20V@P Channel
Maximum Drain Source Resistance (mOhm)145@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N/P-CH Si 60V 3A 8-Pin SOP
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