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MOSFETs GAN063-650WSAQ
Nexperia
GAN063-650WSAQ
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Material | GaN |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 5.16(Max) |
| Package Height | 21.08(Max) |
| Package Length | 16.03(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-247 |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 10 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 143000 |
| Typical Gate Charge @ 10V (nC) | 15 |
| Typical Gate Charge @ Vgs (nC) | 15@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 57 |
| Maximum Drain Source Voltage (V) | 650 |
| Typical Turn-Off Delay Time (ns) | 88 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 34.5 |
| Typical Input Capacitance @ Vds (pF) | 1000@400V |
| Maximum Drain Source Resistance (mOhm) | 60@10V |
| Description |
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