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MOSFETs GRP-DATA-IRHG6110SCS
Infineon
GRP-DATA-IRHG6110SCS
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Not Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 14 |
| Automotive | No |
| PCB changed | 14 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Quad |
| Package Width | 7.74(Max) |
| Package Height | 3.3(Max) |
| Package Length | 19.3(Max) |
| Product Category | Power MOSFET |
| Supplier Package | MO-036AB |
| Standard Package Name | MO-036AB |
| Typical Fall Time (ns) | 45(Max)@N Channel|51(Max)@P Channel |
| Typical Rise Time (ns) | 16(Max)@N Channel|19(Max)@P Channel |
| Number of Elements per Chip | 4 |
| Maximum Power Dissipation (mW) | 1400 |
| Typical Gate Charge @ Vgs (nC) | 11(Max)@12V@N Channel|15(Max)@12V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 20(Max)@N Channel|22(Max)@P Channel |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 65(Max)@N Channel|66(Max)@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.75@P Channel|1@N Channel |
| Typical Input Capacitance @ Vds (pF) | 300@25V@N Channel|335@25V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 700@12V@N Channel|1200@12V@P Channel |
| Description |
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