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IAUC120N04S6L012ATMA1
IAUC120N04S6L012ATMA1
MOSFETs IAUC120N04S6L012ATMA1
Infineon
IAUC120N04S6L012ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.48
Package Height1
Package Length5.15
Product CategoryPower MOSFET
Supplier PackageTDSON EP
Standard Package NameSON
Typical Fall Time (ns)11
Typical Rise Time (ns)3
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)115000
Typical Gate Charge @ 10V (nC)60
Typical Gate Charge @ Vgs (nC)60@10V
Maximum Gate Source Voltage (V)±16
Typical Output Capacitance (pF)1022
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)23
Maximum Diode Forward Voltage (V)1.1
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)1.2
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)150
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)3717@25V
Maximum Drain Source Resistance (mOhm)1.21@10V
Maximum Positive Gate Source Voltage (V)16
Maximum Pulsed Drain Current @ TC=25°C (A)480
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R
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