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MOSFETs IMBG120R030M1HXTMA1
Infineon
IMBG120R030M1HXTMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Material | SiC |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Hex Source |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 14 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 300000 |
| Typical Gate Charge @ Vgs (nC) | 63@18V |
| Maximum Gate Source Voltage (V) | 18 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Typical Gate to Drain Charge (nC) | 15 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 56 |
| Typical Input Capacitance @ Vds (pF) | 2290@800V |
| Maximum Drain Source Resistance (MOhm) | 41@18V |
| Description |
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