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IMBG120R045M1HXTMA1
IMBG120R045M1HXTMA1
MOSFETs IMBG120R045M1HXTMA1
Infineon
IMBG120R045M1HXTMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MaterialSiC
MountingSurface Mount
ECCN (US)EAR99
Pin Count7
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Hex Source
Package Width9.25
Package Height4.4
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyTMOS
Typical Fall Time (ns)9.4
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)227000
Typical Gate Charge @ Vgs (nC)46@18V
Maximum Gate Source Voltage (V)18
Typical Turn-On Delay Time (ns)9.8
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)21
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)47
Typical Input Capacitance @ Vds (pF)1527@800V
Maximum Drain Source Resistance (MOhm)63@18V
Description
Trans MOSFET N-CH SiC 1.2KV 47A 7-Pin(6+Tab) D2PAK T/R
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