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MOSFETs IMBG65R260M1HXTMA1
Infineon
IMBG65R260M1HXTMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| EU RoHS | Compliant |
| Material | SiC |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| PCB changed | 7 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Hex Source |
| Package Width | 9.25 |
| Package Height | 4.4 |
| Package Length | 10 |
| Product Category | Power MOSFET |
| Supplier Package | TO-263 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 5.3 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 65000 |
| Typical Gate Charge @ Vgs (nC) | 6@18V |
| Maximum Gate Source Voltage (V) | 23 |
| Typical Turn-On Delay Time (ns) | 5.3 |
| Maximum Drain Source Voltage (V) | 650 |
| Typical Turn-Off Delay Time (ns) | 7.7 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 201@400V |
| Maximum Drain Source Resistance (MOhm) | 346@18V |
| Description |
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