Tab | Tab |
PPAP | No |
EU RoHS | Compliant |
Material | SiC |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 5 |
Package Height | 21 |
Package Length | 15.8 |
Product Category | Power MOSFET |
Supplier Package | TO-247 |
Maximum IDSS (uA) | 150 |
Process Technology | TMOS |
Standard Package Name | TO-247 |
Typical Fall Time (ns) | 6.2 |
Typical Rise Time (ns) | 11.4 |
Supplier Temperature Grade | Industrial |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 75000 |
Typical Gate Charge @ Vgs (nC) | 15@18V |
Maximum Gate Source Voltage (V) | 18 |
Typical Output Capacitance (pF) | 58 |
Typical Turn-On Delay Time (ns) | 9.2 |
Maximum Drain Source Voltage (V) | 650 |
Typical Gate Plateau Voltage (V) | 7.5 |
Typical Turn-Off Delay Time (ns) | 12.6 |
Typical Diode Forward Voltage (V) | 4 |
Typical Gate to Drain Charge (nC) | 4 |
Maximum Gate Threshold Voltage (V) | 5.7 |
Minimum Gate Threshold Voltage (V) | 3.5 |
Typical Gate Threshold Voltage (V) | 4.5 |
Typical Gate to Source Charge (nC) | 4 |
Typical Reverse Recovery Time (ns) | 55 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 20 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 496@400V |
Typical Reverse Recovery Charge (nC) | 76 |
Maximum Drain Source Resistance (MOhm) | 142@18V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 18 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 48 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 7@400V |
Description | |