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IMW65R107M1HXKSA1
IMW65R107M1HXKSA1
MOSFETs IMW65R107M1HXKSA1
Infineon
IMW65R107M1HXKSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5
Package Height21
Package Length15.8
Product CategoryPower MOSFET
Supplier PackageTO-247
Maximum IDSS (uA)150
Process TechnologyTMOS
Standard Package NameTO-247
Typical Fall Time (ns)6.2
Typical Rise Time (ns)11.4
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)75000
Typical Gate Charge @ Vgs (nC)15@18V
Maximum Gate Source Voltage (V)18
Typical Output Capacitance (pF)58
Typical Turn-On Delay Time (ns)9.2
Maximum Drain Source Voltage (V)650
Typical Gate Plateau Voltage (V)7.5
Typical Turn-Off Delay Time (ns)12.6
Typical Diode Forward Voltage (V)4
Typical Gate to Drain Charge (nC)4
Maximum Gate Threshold Voltage (V)5.7
Minimum Gate Threshold Voltage (V)3.5
Typical Gate Threshold Voltage (V)4.5
Typical Gate to Source Charge (nC)4
Typical Reverse Recovery Time (ns)55
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)496@400V
Typical Reverse Recovery Charge (nC)76
Maximum Drain Source Resistance (MOhm)142@18V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)18
Maximum Pulsed Drain Current @ TC=25°C (A)48
Typical Reverse Transfer Capacitance @ Vds (pF)7@400V
Description
CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package
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