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MOSFETs IMZ120R030M1HXKSA1
Infineon
IMZ120R030M1HXKSA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Material | SiC |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 5 |
| Package Height | 21 |
| Package Length | 15.8 |
| Product Category | Power MOSFET |
| Supplier Package | TO-247 |
| Maximum IDSS (uA) | 200 |
| Process Technology | TMOS |
| Standard Package Name | TO-247 |
| Typical Fall Time (ns) | 11.5 |
| Typical Rise Time (ns) | 11.6 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 227000 |
| Typical Gate Charge @ Vgs (nC) | 63@18V |
| Maximum Gate Source Voltage (V) | 18 |
| Typical Output Capacitance (pF) | 116 |
| Typical Turn-On Delay Time (ns) | 7.7 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Gate Plateau Voltage (V) | 8 |
| Typical Turn-Off Delay Time (ns) | 17.3 |
| Typical Gate to Drain Charge (nC) | 15 |
| Maximum Gate Threshold Voltage (V) | 5.7 |
| Minimum Gate Threshold Voltage (V) | 3.5 |
| Typical Gate Threshold Voltage (V) | 4.5 |
| Typical Gate to Source Charge (nC) | 18 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 56 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 2120 |
| Typical Reverse Recovery Charge (nC) | 320 |
| Maximum Drain Source Resistance (MOhm) | 42@18V |
| Maximum Gate Source Leakage Current (nA) | 120 |
| Maximum Positive Gate Source Voltage (V) | 18 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 13 |
| Description |
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