Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 8 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Package Width | 3 |
Package Height | 0.75(Max) |
Package Length | 3 |
Product Category | Power MOSFET |
Supplier Package | WDFN EP |
Maximum IDSS (uA) | 1@Q 1|500@Q 2 |
Standard Package Name | DFN |
Typical Fall Time (ns) | 3.3|2@Q 1|1.9|1.3@Q 2 |
Typical Rise Time (ns) | 7.2|11.6@Q 1|11.2|11.4@Q 2 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 3230@Q 1|3270@Q 2 |
Typical Gate Charge @ 10V (nC) | 12@Q 1|10.6@Q 2 |
Typical Gate Charge @ Vgs (nC) | 12@10V|6.5@4.5V@Q 1|10.6@10V|5@4.5V@Q 2 |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 4.3@Q 2|8|4.2@Q 1|7.5 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 11|14.1@Q 1|11.6|14.3@Q 2 |
Maximum Gate Threshold Voltage (V) | 2.2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 11@Q 1|13@Q 2 |
Typical Input Capacitance @ Vds (pF) | 605@15V@Q 1|660@15V@Q 2 |
Maximum Drain Source Resistance (mOhm) | 13.3@10V@Q 2|17.4@10V@Q 1 |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |