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NTLLD4901NFTWG
NTLLD4901NFTWG
MOSFETs NTLLD4901NFTWG
onsemi
NTLLD4901NFTWG
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width3
Package Height0.75(Max)
Package Length3
Product CategoryPower MOSFET
Supplier PackageWDFN EP
Maximum IDSS (uA)1@Q 1|500@Q 2
Standard Package NameDFN
Typical Fall Time (ns)3.3|2@Q 1|1.9|1.3@Q 2
Typical Rise Time (ns)7.2|11.6@Q 1|11.2|11.4@Q 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)3230@Q 1|3270@Q 2
Typical Gate Charge @ 10V (nC)12@Q 1|10.6@Q 2
Typical Gate Charge @ Vgs (nC)12@10V|6.5@4.5V@Q 1|10.6@10V|5@4.5V@Q 2
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)4.3@Q 2|8|4.2@Q 1|7.5
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)11|14.1@Q 1|11.6|14.3@Q 2
Maximum Gate Threshold Voltage (V)2.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11@Q 1|13@Q 2
Typical Input Capacitance @ Vds (pF)605@15V@Q 1|660@15V@Q 2
Maximum Drain Source Resistance (mOhm)13.3@10V@Q 2|17.4@10V@Q 1
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 11A/13A 8-Pin WDFN EP T/R
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