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IPAW60R180P7S
IPAW60R180P7S
MOSFETs IPAW60R180P7S
Infineon
IPAW60R180P7S
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.9(Max)
Package Height16.27(Max)
Package Length11.3(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220FP
Maximum IDSS (uA)1
Process TechnologyCoolMOS P7
Standard Package NameTO-220
Typical Fall Time (ns)8
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)26000
Typical Gate Charge @ 10V (nC)25
Typical Gate Charge @ Vgs (nC)25@10V
Maximum Gate Source Voltage (V)20
Typical Output Capacitance (pF)19
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)600
Typical Gate Plateau Voltage (V)5.2
Typical Turn-Off Delay Time (ns)85
Typical Diode Forward Voltage (V)0.9
Typical Gate to Drain Charge (nC)8@10V
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)3
Typical Gate Threshold Voltage (V)3.5
Typical Gate to Source Charge (nC)6
Typical Reverse Recovery Time (ns)175
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1081@400V
Typical Reverse Recovery Charge (nC)1300
Maximum Drain Source Resistance (mOhm)180@10V
Maximum Gate Source Leakage Current (nA)1000
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)53
Typical Reverse Transfer Capacitance @ Vds (pF)36@400V
Description
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
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