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IPB017N10N5LFATMA1
IPB017N10N5LFATMA1
MOSFETs IPB017N10N5LFATMA1
Infineon
IPB017N10N5LFATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quint Source
Package Width9.25
Package Height4.4
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)82
Typical Rise Time (ns)28
Number of Elements per Chip1
Maximum Power Dissipation (mW)313000
Typical Gate Charge @ 10V (nC)195
Typical Gate Charge @ Vgs (nC)195@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)28
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)180
Typical Input Capacitance @ Vds (pF)650@50V
Maximum Drain Source Resistance (MOhm)1.7@10V
Description
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R
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